W4NXD8C-S000 資料

W4NXD8C-S000 功能資料參數： Diameter 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4NXD8C-S000 功能資料參數：

型號：W4NXD8C-S000

生產商: Cree

功能描述: Diameter 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

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W4NXD8C-S000 資料: 資料