W4NXD8C-S000 Date
W4NXD8C-S000 Pdf Descarca foi de calcul: Diameter 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
W4NXD8C-S000 Pdf Descarca foi de calcul:
Partea Nu:W4NXD8C-S000
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Descriere: Diameter 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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