W4NXD8C-S000 datu

W4NXD8C-S000 datu lapā PDF Lejupielādēt: Diameter 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4NXD8C-S000 datu lapā PDF Lejupielādēt:

Daļa Nr：W4NXD8C-S000

Ražotājs: Cree

Apraksts: Diameter 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

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