W4NXD8C-S000 Datasheet
W4NXD8C-S000 Datasheet pdf: Diameter 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
W4NXD8C-S000 Datasheet pdf:
N °:W4NXD8C-S000
Fabricante: Cree
Descripción: Diameter 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Temperatura:
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W4NXD8C-S000 Datasheet: Datasheet
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