W4NXD8C-S000 Datasheet

W4NXD8C-S000 datasivu pdf Lataa: Diameter 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4NXD8C-S000 datasivu pdf Lataa:

Osa N: o：W4NXD8C-S000

Valmistaja: Cree

Kuvaus: Diameter 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

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W4NXD8C-S000 Datasheet: Datasheet