W4TXE0X-0D00 Specifikacijos

W4TXE0X-0D00 PDF Atsisiųsti: Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4TXE0X-0D00 PDF Atsisiųsti:

Dalis Nr：W4TXE0X-0D00

Gamintojas: Cree

Aprašymas: Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

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W4TXE0X-0D00 Specifikacijos: Specifikacijos