W4NXE4C-0D00 tablični

W4NXE4C-0D00 tablični pdf download: Diameter 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4NXE4C-0D00 tablični pdf download:

Dio Br.：W4NXE4C-0D00

Proizvođač: Cree

Opis: Diameter 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

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W4NXE4C-0D00 tablični: tablični