W4NXE4C-0D00 资料

W4NXE4C-0D00 功能资料参数： Diameter 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4NXE4C-0D00 功能资料参数：

型号：W4NXE4C-0D00

生产商: Cree

功能描述: Diameter 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

温度范围:

PDF文件大小:

PDF文件页数:

W4NXE4C-0D00 资料: 资料