K4E160812D-B Date

K4E160812D-B Pdf Descarca foi de calcul: 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.

K4E160812D-B Pdf Descarca foi de calcul:

Partea Nu：K4E160812D-B

Producator: Samsung

Descriere: 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.

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K4E160812D-B Date: Date