K4E160812D-B Datablad

K4E160812D-B Datablad PDF download: 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.

K4E160812D-B Datablad PDF download:

Del nr.：K4E160812D-B

Producent: Samsung

Beskrivelse: 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.

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K4E160812D-B Datablad: Datablad