W4NXD8C-L000 Specifikacijos

W4NXD8C-L000 PDF Atsisiųsti: Diameter 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4NXD8C-L000 PDF Atsisiųsti:

Dalis Nr：W4NXD8C-L000

Gamintojas: Cree

Aprašymas: Diameter 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

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W4NXD8C-L000 Specifikacijos: Specifikacijos