W4NXD8D-S000 资料

W4NXD8D-S000 功能资料参数： Diameter 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4NXD8D-S000 功能资料参数：

型号：W4NXD8D-S000

生产商: Cree

功能描述: Diameter 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

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W4NXD8D-S000 资料: 资料