W4NXD8D-0000 资料

W4NXD8D-0000 功能资料参数： Diameter 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4NXD8D-0000 功能资料参数：

型号：W4NXD8D-0000

生产商: Cree

功能描述: Diameter 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

温度范围:

PDF文件大小:

PDF文件页数:

W4NXD8D-0000 资料: 资料