W4NXE8C-SD00 obrazec

W4NXE8C-SD00 podatkovnem zapisu PDF download: Diameter 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4NXE8C-SD00 podatkovnem zapisu PDF download:

Del št:W4NXE8C-SD00

Proizvajalec: Cree

Opis: Diameter 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

Temperatura:

PDF Velikost:

PDF strani:

W4NXE8C-SD00 obrazec: obrazec