W4NXE4C-LD00 Date

W4NXE4C-LD00 Pdf Descarca foi de calcul: Diameter 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4NXE4C-LD00 Pdf Descarca foi de calcul:

Partea Nu：W4NXE4C-LD00

Producator: Cree

Descriere: Diameter 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

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W4NXE4C-LD00 Date: Date