K4E160811D-B Datasheet

K4E160811D-B Dane pdf do pobrania: 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.

K4E160811D-B Dane pdf do pobrania:

Część nr：K4E160811D-B

Producent: Samsung

Opis: 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.

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K4E160811D-B Datasheet: Datasheet