W6NXD0KLSR-0000 Specifikacijos

W6NXD0KLSR-0000 PDF Atsisiųsti: Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W6NXD0KLSR-0000 PDF Atsisiųsti:

Dalis Nr：W6NXD0KLSR-0000

Gamintojas: Cree

Aprašymas: Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

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W6NXD0KLSR-0000 Specifikacijos: Specifikacijos